optocoupler, phototransistor output, with base connection www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83612 294 rev. 1.5, 08-may-08 il1/il2/il5 vishay semiconductors description the il1/il2/il5 ar e optically coupled isolated pairs employing gaas infrared leds and silicon npn phototransistor. signal inform ation, including a dc level, can be transmitted by the drive while maintaining a high degree of electrical isolation between input and output. the il1/il2/il5 are especially designed for driving medium-speed logic and can be used to eliminate troublesome ground loop and noise problems. these couplers can be used also to replace relays and transformers in many digital interface applications such as crt modulation. features ? current transfer rati o (see order information) ? isolation test voltage 5300 v rms ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ? ul1577, file no. e52744 system code h or j, double protection ? din en 60747-5-5 available with option 1 ? bsi iec 60950; iec 60065 note for additional information on the availabl e options refer to option information. i179004 1 2 3 6 5 4 b c e a c n c order information part remarks il1 ctr > 20 %, dip-6 il2 ctr > 100 %, dip-6 il5 ctr > 50 %, dip-6 IL1-X006 ctr > 20 %, dip-6 400 mil (option 6) il2-x006 ctr > 100 %, dip-6 400 mil (option 6) il2-x009 ctr >100 %, smd-6 (option 9) il5-x009 ctr > 50 %, smd-6 (option 9) absolute maximum ratings (1) parameter test condition part symbol value unit input reverse voltage v r 6.0 v forward current i f 60 ma surge current i fsm 2.5 a power dissipation p diss 100 mw derate linearly from 25 c 1.33 mw/c output collector emitter breakdown voltage il1 bv ceo 50 v il2 bv ceo 70 v il5 bv ceo 70 v emitter base breakdown voltage bv ebo 7.0 v collector base breakdown voltage bv cbo 70 v collector current i c 50 ma t < 1.0 ms i c 400 ma power dissipation p diss 200 mw derate linearly from 25 c 2.6 mw/c
document number: 83612 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.5, 08-may-08 295 il1/il2/il5 optocoupler, phototransistor output, with base connection vishay semiconductors notes (1) t amb = 25 c, unless otherwise specified. stresses in excess of the absolute maximu m ratings can cause permanent damage to the device. functional oper ation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. exposure to abs olute maximum ratings for extended periods of the ti me can adversely affect reliability. (2) refer to reflow profile for soldering conditions for surface mo unted devices (smd). refer to wave profile for soldering conditi ons for through hole devices (dip). note t amb = 25 c, unless otherwise specified. minimum and maximum values are test ing requirements. typical values are characteri stics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. coupler package power dissipation p tot 250 mw derate linearly from 25 c 3.3 mw/c isolation test voltage (between emitter and detector referred to standard climate 23 c/50 % rh, din 50014) v iso 5300 v rms creepage distance 7.0 mm clearance distance 7.0 mm comparative tracking index per din iec 112/vde 0303, part 1 cti 175 isolation resistance v io = 500 v, t amb = 25 c r io 10 12 v io = 500 v, t amb = 100 c r io 10 11 storage temperature t stg - 40 to + 150 c operating temperature t amb - 40 to + 100 c junction temperature t j 100 c soldering temperature (2) 2.0 mm from case bottom t sld 260 c absolute maximum ratings (1) parameter test condition part symbol value unit electrical characteristics parameter test condition symbol min. typ. max. unit input forward voltage i f = 60 ma v f 1.25 1.65 v breakdown voltage i r = 10 a v br 6.0 30 v reverse current v r = 6.0 v i r 0.01 10 a capacitance v r = 0 v, f = 1.0 mhz c o 40 pf thermal resistance junction to lead r thjl 750 k/w output collector emitter capacitance v ce = 5.0 v, f = 1.0 mhz c ce 6.8 pf collector base capacitance v cb = 5.0 v, f = 1.0 mhz c cb 8.5 pf emitter base capacitance v eb = 5.0 v, f = 1.0 mhz c eb 11 pf collector emitter leakage voltage v ce = 10 v i ceo 5.0 50 na collector emitter saturation voltage i ce = 1.0 ma, i b = 20 a v cesat 0.25 v base emitter voltage v ce = 10 v, i b = 20 a v be 0.65 v dc forward current gain v ce = 10 v, i b = 20 a h fe 200 650 1800 dc forward current gain saturated v ce = 0.4 v, i b = 20 a h fesat 120 400 600 thermal resistance junction to lead r thjl 500 k/w coupler capacitance (input to output) v i-o = 0 v, f = 1.0 mhz c io 0.6 pf insulation resistance v i-o = 500 v r s 10 14
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83612 296 rev. 1.5, 08-may-08 il1/il2/il5 vishay semiconductors optocoupler, phototransistor output, with base connection current transfer ratio parameter test condition part symbol min. typ. max. unit current transfer ratio (collector emitter saturated) i f = 10 ma, v ce = 0.4 v il1 ctr cesat 75 % il2 ctr cesat 170 % il5 ctr cesat 100 % current transfer ratio (collector emitter) i f = 10 ma, v ce = 10 v il1 ctr ce 20 80 300 % il2 ctr ce 100 200 500 % il5 ctr ce 50 130 400 % current transfer ratio (collector base) i f = 10 ma, v cb = 9.3 v il1 ctr cb 0.25 % il2 ctr cb 0.25 % il5 ctr cb 0.25 % switching characteristics parameter test condition part symbol min. typ. max. unit non-saturated current time v ce = 5.0 v, r l = 75 , t p measured at 50 % of output il1 i f 20 ma il2 4.0 il5 10 delay time v ce = 5.0 v, r l = 75 , t p measured at 50 % of output il1 t d 0.8 s il2 1.7 il5 1.7 rise time v ce = 5.0 v, r l = 75 , t p measured at 50 % of output il1 t r 1.9 s il2 2.6 il5 2.6 storage time v ce = 5.0 v, r l = 75 , t p measured at 50 % of output il1 t s 0.2 s il2 0.4 il5 0.4 fall time v ce = 5.0 v, r l = 75 , t p measured at 50 % of output il1 t f 1.4 s il2 2.2 il5 2.2 propagation h to l v ce = 5.0 v, r l = 75 , t p measured at 50 % of output il1 t phl 0.7 s il2 1.2 il5 1.1 propagation l to h v ce = 5.0 v, r l = 75 , t p measured at 50 % of output il1 t plh 1.4 s il2 2.3 il5 2.5 saturated current time v ce = 0.4 v, r l = 1.0 k , v cl = 5.0 v, v th = 1.5 v il1 i f 20 ma il2 5.0 il5 10 delay time v ce = 0.4 v, r l = 1.0 k , v cl = 5.0 v, v th = 1.5 v il1 t d 0.8 s il2 1.0 il5 1.7 rise time v ce = 0.4 v, r l = 1.0 k , v cl = 5.0 v, v th = 1.5 v il1 t r 1.2 s il2 2.0 il5 7.0 storage time v ce = 0.4 v, r l = 1.0 k , v cl = 5.0 v, v th = 1.5 v il1 t s 7.4 s il2 5.4 il5 4.6
document number: 83612 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.5, 08-may-08 297 il1/il2/il5 optocoupler, phototransistor output, with base connection vishay semiconductors typical characteristics t amb = 25 c, unless otherwise specified fig. 1 - non-saturated switching schematic fig. 2 - saturated switching schematic fig. 3 - non-saturated switching timing fig. 4 - saturated switching timing saturated fall time v ce = 0.4 v, r l = 1.0 k , v cl = 5.0 v, v th = 1.5 v il1 t f 7.6 s il2 13.5 il5 20 propagation h to l v ce = 0.4 v, r l = 1.0 k , v cl = 5.0 v, v th = 1.5 v il1 t phl 1.6 s il2 5.4 il5 2.6 propagation l to h v ce = 0.4 v, r l = 1.0 k , v cl = 5.0 v, v th = 1.5 v il1 t plh 8.6 s il2 7.4 il5 7.2 switching characteristics parameter test condition part symbol min. typ. max. unit common mode transient immunity parameter test condition part symbol min. typ. max. unit common mode rejection output high v cm = 50 v p-p , r l = 1 k , i f = 10 ma |cm h | 5000 v/s common mode rejection output low v cm = 50 v p-p , r l = 1 k , i f = 10 ma |cm l | 5000 v/s common mode coupling capacitance c cm 0.01 pf iil1_01 v o v cc = 5 v r l = 75 i f = 10 ma f = 10 khz df = 50 % iil1_02 v o r l v cc = 5 v i f = 10 ma f = 10 khz df = 50 % iil1_03 t r t f t d 50 % t phl v o i f t plh t s iil1_04 i f t r v o t d t s t f t phl t plh v th = 1.5 v
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83612 298 rev. 1.5, 08-may-08 il1/il2/il5 vishay semiconductors optocoupler, phototransistor output, with base connection fig. 5 - forward voltage vs. forward current fig. 6 - normalized non-saturated and saturated ctr vs. led current fig. 7 - normalized non-saturated and saturated ctr vs. led current fig. 8 - normalized non-saturated and saturated ctr vs. led current fig. 9 - normalized non-saturated and saturated ctr, t amb = 100 c vs. led current fig. 10 - collector emitter current vs. temperature and led current iil1_05 100 10 1 0.1 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 i f - for w ard c u rrent (ma) v f - for w ard v oltage ( v ) t a = - 55 c t a = 25 c t a = 100 c iil1_06 100 10 1 0.1 0.0 0.5 1.0 1.5 n ctr(sat) n ctr i f - led c u rrent (ma) n ctr - n ormalized ctr n ormalized to: v ce = 10 v ,i f = 10 ma ctrce(sat) v ce = 0.4 v iil1_07 100 10 1 0.1 0.0 0.5 1.0 1.5 n ctr(sat) n ctr i f - led c u rrent (ma) n ctr - n ormalized ctr n ormalized to: v ce = 10 v ,i f = 10 ma t a = 50 c ctrce(sat) v ce = 0.4 v iil1_0 8 100 10 1 0.1 0.0 0.5 1.0 1.5 i f - led c u rrent (ma) n ctr(sat) n ctr n ormalized to: v ce = 10 v ,i f = 10 ma ctrce(sat) v ce = 0.4 v t a = 70 c n ctr - n ormalized ctr iil1_09 100 10 1 0.1 0.0 0.5 1.0 1.5 i f - led c u rrent (ma) n ctr(sat) n ctr n ctr - n ormalized ctr n ormalized to: v ce = 10 v ,i f = 10 ma ctrce(sat) v ce = 0.4 v t a = 100 c iil1_10 60 50 40 30 20 10 0 0 5 10 15 20 25 30 35 50 c 70 c 100 c i f - led c u rrent (ma) i ce - collector c u rrent (ma) 25 c
document number: 83612 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.5, 08-may-08 299 il1/il2/il5 optocoupler, phototransistor output, with base connection vishay semiconductors fig. 11 - collector emitter leakage current vs.temperature fig. 12 - normalized ctr cb vs. led current and temperature fig. 13 - collector base p hotocurrent vs. led current fig. 14 - normalized photocurrent vs. i f and temperature fig. 15 - normalized non-saturated h fe vs. base current and temperature fig. 16 - normalized saturated h fe vs. base current and temperature iil1_11 - 20 20 40 60 8 0 100 10 5 10 4 10 3 10 2 10 1 10 0 10 -1 10 -2 t a - am b ient temperat u re (c) i ceo - collector emitter (na) typical v ce = 10 v w orst case 0 iil1_12 0.1 1 10 100 0.0 0.5 1.0 1.5 25 c 50 c 70 c i f - led c u rrent (ma) n ctr c b - n ormalized ctr c b i f = 10 ma v c b = 9.3 v n ormalized to: iil1_13 100 10 1 0.1 0.01 0.1 1 10 100 1000 i f - led c u rrent (ma) ic b - collector base photoc u rrent - a ic b = 1.0357 * if ^ 1.3631 iil1_14 0.1 1 10 100 0.01 0.1 1 10 i f - led c u rrent (ma) n ormalized to: i f = 10 ma a = - 20 c n ib-t a = 25 c n ib-t a = 50 c n ib-t a = 70 c n ormalized photoc u rrent n ib-t iil1_15 1 10 100 1000 0.4 0.6 0. 8 1.0 1.2 i b - base c u rrent ( a) n h fe - n ormalized h fe i b = 20 a v ce = 10 v - 20 c 50 c 70 c n ormalized to: 25 c iil1_16 1 10 100 1000 0.0 0.5 1.0 1.5 i b - base c u rrent ( a) v ce = 0.4 v n ormalized to: v ce = 10 v i b = 20 a 70 c 50 c 25 c - 20 c n h fe(sat) - n ormalized sat u ratedh fe
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83612 300 rev. 1.5, 08-may-08 il1/il2/il5 vishay semiconductors optocoupler, phototransistor output, with base connection fig. 17 - propagation delay vs. collector load resistor package dimensions in inches (millimeters) iil1_17 r l - collector load resistor (k ) 100 10 1 0.1 1 10 100 1000 1.0 1.5 2.0 2.5 tplh tphl t p - propagation delay ( s) t phl - propagation delay ( s) i f = 10 ma v cc = 5 v , v th = 1.5 v i17 8 004 0.010 (0.25) typ. 0.114 (2.90) 0.130 (3.0) 0.130 (3.30) 0.150 (3. 8 1) 0.031 (0. 8 0) min. 0.300 (7.62) typ. 0.031 (0. 8 0) 0.035 (0.90) 0.100 (2.54) typ. 0.039 (1.00) min. 0.01 8 (0.45) 0.022 (0.55) 0.04 8 0.022 (0.55) 0.24 8 (6.30) 0.256 (6.50) 0.335 ( 8 .50) 0.343 ( 8 .70) pin one id 6 5 4 1 2 3 1 8 3 to 9 0.300 to 0.347 (7.62 to 8 . 8 1) 4 typ. iso method a (0.45) 0.014(0.35) 0.010 (0.25) 0.400(10.16) 0.430 (10.92) 0.307(7. 8 ) 0.291(7.4) 0.407 (10.36) 0.391 (9.96) option 6 1 8 493 min. 0.300 (7.62 ) ref. 0.375 (9.53) 0.395 (10.03 ) 0.0040 (0.102) 0.009 8 (0.249) 15 max. option 9 (0.249) 0.020 (0.51) 0.040 (1.02) 0.315 ( 8 .00) 0.012 (0.30) typ.
document number: 83612 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.5, 08-may-08 301 il1/il2/il5 optocoupler, phototransistor output, with base connection vishay semiconductors ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve t he performance of our products, processes, distribution and o perating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances in to the atmosphere whic h are known as ozone depleting substances (odss). the montreal protocol (1987) a nd its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. vari ous national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of co ntinuous improvements to elim inate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively. 2. class i and ii ozone depleting substances in the clean air ac t amendments of 1990 by the environmental protection agency (epa) in the usa. 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify t hat our semiconductors are not manufactured with ozone dep leting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating para meters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, dam ages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death as sociated with such unint ended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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